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| savantic semiconductor product specification silicon npn power transistors 2SC2552 description with to-220c package high collector breakdown voltage : v c eo =400v(min) excellent switching time : t r =1.0s(max.) : t f =1.0s(max.@i c =0.8a applications switching regulator and high voltage switching applications high speed dc-dc converter applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 500 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current 2 a i b base current 0.5 a t a =25 1.5 p c collector dissipation t c =25 20 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SC2552 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ; i b =0 400 v v (br)cbo collector-base breakdown voltage i c =1ma ; i e =0 500 v v cesat collector-emitter saturation voltage i c =1a; i b =0.2a 1.0 v v besat base-emitter saturation voltage i c =1a; i b =0.2a 1.5 v i cbo collector cut-off current v cb =400v ;i e =0 100 a i ebo emitter cut-off current v eb =7v; i c =0 1 ma h fe-1 dc current gain i c =0.1a ; v ce =5v 20 h fe-2 dc current gain i c =1a ; v ce =5v 8 switching times t r rise time 1.0 s t stg storage time 2.5 s t f fall time v cc > 200v; i c =0.8a i b1 =-i b2 =0.08a;r l =250 @ duty cycle b 1% 1.0 s savantic semiconductor product specification 3 silicon npn power transistors 2SC2552 package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm) savantic semiconductor product specification 4 silicon npn power transistors 2SC2552 |
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